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Datasheet IPA60R460CE Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IPA60R460CE | MOSFET, Transistor IPD60R460CE,IPA60R460CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenabling |  Infineon Technologies | mosfet |
IPA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IPA028N08N3G | Power-Transistor OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; Infineon Technologies transistor | | |
| 2 | IPA029N06N | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V IPA029N06N
DataSheet
Rev.2.2 Final
PowerManagement&Multimarket
1Description
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermal  Infineon mosfet | | |
| 3 | IPA030N10N3G | Power-Transistor IPA030N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified accor Infineon Technologies transistor | | |
| 4 | IPA032N06N3G | Power-Transistor Type
OptiMOSTM3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-fre Infineon transistor | | |
| 5 | IPA037N08N3G | Power-Transistor OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; Infineon Technologies transistor | | |
| 6 | IPA040N06N | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V IPA040N06N
DataSheet
Rev.2.1 Final
PowerManagement&Multimarket
1Description
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermal Infineon mosfet | | |
| 7 | IPA041N04NG | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª3Power-Transistor,40V IPA041N04NG
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
1Description
Features
•OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplica Infineon mosfet | | |
| 8 | IPA045N10N3G | MOSFET, Transistor IPA045N10N3G
MOSFET
OptiMOSTM3Power-Transistor,100V
Features
•N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortarget Infineon Technologies mosfet | | |
| 9 | IPA057N06N3G | Power-Transistor Ie\Q
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1F1<1>3 85 D5CD54 Q) 2 6B55 @<1D Infineon transistor | |
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