|
|
Datasheet IDT71V321L Equivalent ( PDF ) - Data |
| N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
| 1 | IDT71V321L | HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT
Integrated Device Technology, Inc.
IDT71V321S, L
FEATURES:
High-speed access Commercial: 25, 35, 55ns (max.) Low-power operation IDT71V321S Active: 250mW (typ.) Standby: 3.3mW (typ.) IDT71V321L Active: 250mW (typ.) Standby: 660 W (typ.) Two INT flags for port-to-port communications On-chip port arbitration logic BUSY output f
|
 Integrated Device Technology |
 |
| 2 | IDT71V321L25J | HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT
Integrated Device Technology, Inc.
IDT71V321S, L
FEATURES:
High-speed access Commercial: 25, 35, 55ns (max.) Low-power operation IDT71V321S Active: 250mW (typ.) Standby: 3.3mW (typ.) IDT71V321L Active: 250mW (typ.) Standby: 660 W (typ.) Two INT flags for port-to-port communications On-chip port arbitration logic BUSY output f
|
Integrated Device Technology |
|
| 3 | IDT71V321L25PF | HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT
Integrated Device Technology, Inc.
IDT71V321S, L
FEATURES:
High-speed access Commercial: 25, 35, 55ns (max.) Low-power operation IDT71V321S Active: 250mW (typ.) Standby: 3.3mW (typ.) IDT71V321L Active: 250mW (typ.) Standby: 660 W (typ.) Two INT flags for port-to-port communications On-chip port arbitration logic BUSY output f
|
Integrated Device Technology |
|
| 4 | IDT71V321L35J | HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT
Integrated Device Technology, Inc.
IDT71V321S, L
FEATURES:
High-speed access Commercial: 25, 35, 55ns (max.) Low-power operation IDT71V321S Active: 250mW (typ.) Standby: 3.3mW (typ.) IDT71V321L Active: 250mW (typ.) Standby: 660 W (typ.) Two INT flags for port-to-port communications On-chip port arbitration logic BUSY output f
|
Integrated Device Technology |
|
| 5 | IDT71V321L35PF | HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT
Integrated Device Technology, Inc.
IDT71V321S, L
FEATURES:
High-speed access Commercial: 25, 35, 55ns (max.) Low-power operation IDT71V321S Active: 250mW (typ.) Standby: 3.3mW (typ.) IDT71V321L Active: 250mW (typ.) Standby: 660 W (typ.) Two INT flags for port-to-port communications On-chip port arbitration logic BUSY output f
|
Integrated Device Technology |
|
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | IDT02S60C | Schottky Diode
IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
|  Infineon Technologies |
 |
| 2 | IDT03S60C | Schottky Diode
IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| Infineon Technologies |
|
| 3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode
IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro
|  Infineon Technologies AG |
|
| 4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode
IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;
| Infineon Technologies AG |
|
| 5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode
IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| Infineon Technologies AG |
|
| 6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode
IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| Infineon Technologies AG |
|
| 7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K
|  IDT |
|
| Esta página es del resultado de búsqueda del IDT71V321L. Si pulsa el resultado de búsqueda de IDT71V321L se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |