Datasheet IDT71V30S25TF Equivalent ( PDF ) - Data

HIGH-SPEED 3.3V 1K X 8 DUAL-PORT STATIC RAM Features x x IDT71V30S, L High-speed access Commercial: 25, 35, 55ns (max.) Low-power operation IDT71V30S Active: 375mW (typ.) Standby: 5mW (typ.) IDT71V30L Active: 375mW (typ.) Standby: 1mW (typ.) x x x x x x On-chip port arbitration logic Interrupt flags for port-to-port communication Fully asynchronous operation from either port Battery bac

HIGH-SPEED 3.3V 1K X 8 DUAL-PORT STATIC RAM Features x x IDT71V30S, L High-speed access Commercial: 25, 35, 55ns (max.) Low-power operation IDT71V30S Active: 375mW (typ.) Standby: 5mW (typ.) IDT71V30L Active: 375mW (typ.) Standby: 1mW (typ.) x x x x x x On-chip port arbitration logic Interrupt flags for port-to-port communication Fully asynchronous operation from either port Battery bac

IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo

IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo

IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro

IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;

IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R

IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R