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Datasheet IDT71V2578SA133BG Equivalent ( PDF ) - Ram |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | IDT71V2578SA133BG | 128K X 36/ 256K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Pipelined Outputs/ Burst Counter/ Single Cycle Deselect 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I, O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
x x
IDT71V2576S IDT71V2578S IDT71V2576SA IDT71V2578SA
Features
128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial and Industrial: 150MH- 3.8ns clock access time 133MH- 4.2ns clock access time LBO input selects interleaved or linear burst mode Self-timed
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Integrated Device Technology |
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2 | IDT71V2578SA133BGI | 128K X 36/ 256K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Pipelined Outputs/ Burst Counter/ Single Cycle Deselect 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I, O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
x x
IDT71V2576S IDT71V2578S IDT71V2576SA IDT71V2578SA
Features
128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial and Industrial: 150MH- 3.8ns clock access time 133MH- 4.2ns clock access time LBO input selects interleaved or linear burst mode Self-timed
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Integrated Device Technology |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IDT02S60C | Schottky Diode
IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| Infineon Technologies |
|
2 | IDT03S60C | Schottky Diode
IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| Infineon Technologies |
|
3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode
IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro
| Infineon Technologies AG |
|
4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode
IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;
| Infineon Technologies AG |
|
5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode
IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| Infineon Technologies AG |
|
6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode
IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| Infineon Technologies AG |
|
7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K
| IDT |
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Número de pieza | Descripción | Fabricantes | |
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