Datasheet IDT71V2577S Equivalent ( PDF ) - Ram

128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I, O, Flow-Through Outputs Burst Counter, Single Cycle Deselect Features x x IDT71V2577S IDT71V2579S IDT71V2577SA IDT71V2579SA Description The IDT71V2577, 79 are high-speed SRAMs organized as 128K x 36, 256K x 18. The IDT71V2577, 79 SRAMs contain write, data, address and control registers. There are no registers in the data output path (flow-thr

128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I, O, Flow-Through Outputs Burst Counter, Single Cycle Deselect Features x x IDT71V2577S IDT71V2579S IDT71V2577SA IDT71V2579SA Description The IDT71V2577, 79 are high-speed SRAMs organized as 128K x 36, 256K x 18. The IDT71V2577, 79 SRAMs contain write, data, address and control registers. There are no registers in the data output path (flow-thr

IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo

IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo

IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro

IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;

IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R

IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R