Datasheet IDT71V124SA20 Equivalent ( PDF ) - Cmos

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout x x IDT71V124SA Features 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power, GND) for reduced noise Equal access and cycle times Commercial: 10, 12, 15, 20ns Industrial: 10, 12, 15, 20ns One Chip Select plus one Output Enable pin Inputs and outputs are LVTTL-compatible Single 3.3V supply L

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout x x IDT71V124SA Features 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power, GND) for reduced noise Equal access and cycle times Commercial: 10, 12, 15, 20ns Industrial: 10, 12, 15, 20ns One Chip Select plus one Output Enable pin Inputs and outputs are LVTTL-compatible Single 3.3V supply L

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout x x IDT71V124SA Features 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power, GND) for reduced noise Equal access and cycle times Commercial: 10, 12, 15, 20ns Industrial: 10, 12, 15, 20ns One Chip Select plus one Output Enable pin Inputs and outputs are LVTTL-compatible Single 3.3V supply L

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout x x IDT71V124SA Features 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power, GND) for reduced noise Equal access and cycle times Commercial: 10, 12, 15, 20ns Industrial: 10, 12, 15, 20ns One Chip Select plus one Output Enable pin Inputs and outputs are LVTTL-compatible Single 3.3V supply L

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout x x IDT71V124SA Features 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power, GND) for reduced noise Equal access and cycle times Commercial: 10, 12, 15, 20ns Industrial: 10, 12, 15, 20ns One Chip Select plus one Output Enable pin Inputs and outputs are LVTTL-compatible Single 3.3V supply L

IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo

IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo

IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro

IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;

IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R

IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R