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Datasheet IDT71V124SA12PHI Equivalent ( PDF ) - Cmos |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | IDT71V124SA12PHI | 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout
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IDT71V124SA
Features
128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power, GND) for reduced noise Equal access and cycle times Commercial: 10, 12, 15, 20ns Industrial: 10, 12, 15, 20ns One Chip Select plus one Output Enable pin Inputs and outputs are LVTTL-compatible Single 3.3V supply L
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Integrated Device Technology |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IDT02S60C | Schottky Diode
IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| Infineon Technologies |
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2 | IDT03S60C | Schottky Diode
IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| Infineon Technologies |
|
3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode
IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro
| Infineon Technologies AG |
|
4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode
IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;
| Infineon Technologies AG |
|
5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode
IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| Infineon Technologies AG |
|
6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode
IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| Infineon Technologies AG |
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7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K
| IDT |
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