DataSheet.es    

Datasheet IDT71V016SA15PH8 Equivalent ( PDF ) - Cmos

N.º Número de pieza Descripción Fabricantes Comprar ahora
1IDT71V016SA15PH8 3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) Features x x IDT71V016SA Description The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for highspeed memory needs. The IDT71V
Integrated Device Technology
Integrated Device Technology
buy IDT71V016SA15PH8


IDT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1 IDT02S60C Schottky Diode

IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
Infineon Technologies
Infineon Technologies
datasheet IDT02S60C pdf
2 IDT03S60C Schottky Diode

IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
Infineon Technologies
Infineon Technologies
datasheet IDT03S60C pdf
3 IDT04S60C 2nd Generation thinQ SiC Schottky Diode

IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro
Infineon Technologies AG
Infineon Technologies AG
datasheet IDT04S60C pdf
4 IDT05S60C 2nd Generation thinQ SiC Schottky Diode

IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;
Infineon Technologies AG
Infineon Technologies AG
datasheet IDT05S60C pdf
5 IDT06S60C 2nd Generation thinQ SiC Schottky Diode

IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
Infineon Technologies AG
Infineon Technologies AG
datasheet IDT06S60C pdf
6 IDT08S60C 2nd Generation thinQ SiC Schottky Diode

IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
Infineon Technologies AG
Infineon Technologies AG
datasheet IDT08S60C pdf
7 IDT100494 HIGH-SPEED BiCMOS ECL STATIC RAM 64K

IDT
IDT
datasheet IDT100494 pdf



Esta página es del resultado de búsqueda del IDT71V016SA15PH8. Si pulsa el resultado de búsqueda de IDT71V016SA15PH8 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap