Datasheet IDT71P71804 Equivalent ( PDF ) - Ram

18Mb Pipelined DDR™II SRAM Burst of 2 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71P71804 IDT71P71604 Description The IDT DDRIITM Burst of two SRAMs are high-speed synchronous memories with a double-data-rate (DDR), bidirectional data port. This scheme allows maximization of the bandwidth on the data bus by passing two data items per clock cycle. The address bus operates at single data r

18Mb Pipelined DDR™II SRAM Burst of 2 Features x x x x x x x x x Advance Information IDT71P71204 IDT71P71104 IDT71P71804 IDT71P71604 Description The IDT DDRIITM Burst of two SRAMs are high-speed synchronous memories with a double-data-rate (DDR), bidirectional data port. This scheme allows maximization of the bandwidth on the data bus by passing two data items per clock cycle. The address bus

IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo

IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo

IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro

IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;

IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R

IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R