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Datasheet IDT71L024L70PZ Equivalent ( PDF ) - Ram |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | IDT71L024L70PZ | low power 3v cmos sram 1 meg (128k X 8-bit) LOW POWER 3V CMOS SRAM 1 MEG (128K x 8-BIT)
Integrated Device Technology, Inc.
ADVANCE INFORMATION IDT71L024
FEATURES:
128K x 8 Organization Wide Operating Voltage Range: 2.7V to 3.6V Speed Grades: 70ns, 100ns Low Operating Power: 25mA (max) Low Standby Power: 5 A (max) Low-Voltage Data Retention: 1.5V (min) Available in 32-pin, 13.4mm x 8mm Type I TSOP package
DESCRIPTION:
The IDT71L024
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![]() Integrated Device Technology |
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2 | IDT71L024L70PZI | low power 3v cmos sram 1 meg (128k X 8-bit) LOW POWER 3V CMOS SRAM 1 MEG (128K x 8-BIT)
Integrated Device Technology, Inc.
ADVANCE INFORMATION IDT71L024
FEATURES:
128K x 8 Organization Wide Operating Voltage Range: 2.7V to 3.6V Speed Grades: 70ns, 100ns Low Operating Power: 25mA (max) Low Standby Power: 5 A (max) Low-Voltage Data Retention: 1.5V (min) Available in 32-pin, 13.4mm x 8mm Type I TSOP package
DESCRIPTION:
The IDT71L024
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![]() Integrated Device Technology |
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IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IDT02S60C | Schottky Diode
IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| ![]() Infineon Technologies |
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2 | IDT03S60C | Schottky Diode
IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo
| ![]() Infineon Technologies |
![]() |
3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode
IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro
| ![]() Infineon Technologies AG |
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4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode
IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;
| ![]() Infineon Technologies AG |
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5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode
IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| ![]() Infineon Technologies AG |
![]() |
6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode
IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R
| ![]() Infineon Technologies AG |
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7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K
| ![]() IDT |
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Número de pieza | Descripción | Fabricantes | |
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