Datasheet IDT71F432 Equivalent ( PDF ) - Data

Integrated Device Technology, Inc. 32K x 32 MCache SYNCHRONOUS PIPELINED CACHE RAM IDT71F432 FEATURES: Uses IDT's Fusion Memory technology 66 and 75 MH- speed grades 3-1-1-1 Pipelined Burst Read 3-1-1-1 Pipelined Burst Write 3-1-1-1-1-1-1-1... extended pipelined operation Refresh overhead consumes less than 0.5% of cycles Pinout is superset of industry standard PBSRAM Interchangeable

Integrated Device Technology, Inc. 32K x 32 MCache SYNCHRONOUS PIPELINED CACHE RAM IDT71F432 FEATURES: Uses IDT's Fusion Memory technology 66 and 75 MH- speed grades 3-1-1-1 Pipelined Burst Read 3-1-1-1 Pipelined Burst Write 3-1-1-1-1-1-1-1... extended pipelined operation Refresh overhead consumes less than 0.5% of cycles Pinout is superset of industry standard PBSRAM Interchangeable

Integrated Device Technology, Inc. 32K x 32 MCache SYNCHRONOUS PIPELINED CACHE RAM IDT71F432 FEATURES: Uses IDT's Fusion Memory technology 66 and 75 MH- speed grades 3-1-1-1 Pipelined Burst Read 3-1-1-1 Pipelined Burst Write 3-1-1-1-1-1-1-1... extended pipelined operation Refresh overhead consumes less than 0.5% of cycles Pinout is superset of industry standard PBSRAM Interchangeable

Integrated Device Technology, Inc. 32K x 32 MCache SYNCHRONOUS PIPELINED CACHE RAM IDT71F432 FEATURES: Uses IDT's Fusion Memory technology 66 and 75 MH- speed grades 3-1-1-1 Pipelined Burst Read 3-1-1-1 Pipelined Burst Write 3-1-1-1-1-1-1-1... extended pipelined operation Refresh overhead consumes less than 0.5% of cycles Pinout is superset of industry standard PBSRAM Interchangeable

IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo

IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery, no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdo

IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; Ro

IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating;

IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R

IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery, No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; R