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Datasheet HY3306B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HY3306B | N-Channel Enhancement Mode MOSFET HY3306P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/130A
RDS(ON) = 5.4 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
• Switching applicat |  HOOYI | mosfet |
HY3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HY3008B | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
| 2 | HY3008M | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
| 3 | HY3008P | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
| 4 | HY3008PM | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
| 5 | HY3008PS | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
| 6 | HY306-01 | HY306-01 HINGYIP data | | |
| 7 | HY30FR060P | FAST RECOVERY EPITAXIAL DIODE FAST RECOVERY EPITAXIAL DIODE
FEATURES
• UltraFast Recovery Time • Soft Recovery Characteristic • Low Forward Voltage • Low Recovery Loss • High Surge Current Capability • RoHS Compliant
APPLICATION • Converter, PFC • Freewheeling, Snubber • UPS, Plating Power Supply • Inversion  HY diode | |
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