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Datasheet HY3210PM Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HY3210PM | N-Channel Enhancement Mode MOSFET HY3210P/M/B/PS/PM
Features
• 100V/120A
RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
DS G TO-220FB-3L
DS G TO-220FB-3M
DS G TO-263-2L
Applicati |  HOOYI | mosfet |
HY3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HY3008B | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
| 2 | HY3008M | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
| 3 | HY3008P | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
| 4 | HY3008PM | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
| 5 | HY3008PS | N-Channel Enhancement Mode MOSFET HOOYI mosfet | | |
| 6 | HY306-01 | HY306-01 HINGYIP data | | |
| 7 | HY30FR060P | FAST RECOVERY EPITAXIAL DIODE FAST RECOVERY EPITAXIAL DIODE
FEATURES
• UltraFast Recovery Time • Soft Recovery Characteristic • Low Forward Voltage • Low Recovery Loss • High Surge Current Capability • RoHS Compliant
APPLICATION • Converter, PFC • Freewheeling, Snubber • UPS, Plating Power Supply • Inversion  HY diode | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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