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Datasheet HUFA76609D3S Equivalent ( PDF ) - Mosfet |
| N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
| 1 | HUFA76609D3S | 10A/ 100V/ 0.165 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET HUFA76609D3, HUFA76609D3S
Data Sheet January 2002
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
JEDEC TO-252AA
DRAIN (FLANGE)
Features
Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal
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 Fairchild Semiconductor |
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HUF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | HUF75229P3 | 44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET
HUF75229P3
Data Sheet December 2001
44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding perfor
| Fairchild Semiconductor |
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| 2 | HUF75229P3 | 44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET
HUF75229P3
Data Sheet June 1998 File Number 4536.1
44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in ou
|  Intersil Corporation |
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| 3 | HUF75307D3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re
| Fairchild Semiconductor |
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| 4 | HUF75307D3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet June 1999 File Number
4353.6
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per
| Intersil Corporation |
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| 5 | HUF75307D3S | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re
| Fairchild Semiconductor |
|
| 6 | HUF75307D3S | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet June 1999 File Number
4353.6
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per
| Intersil Corporation |
|
| 7 | HUF75307P3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re
| Fairchild Semiconductor |
|
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