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Datasheet HUF76419D3S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HUF76419D3S | 20A/ 60V/ 0.043 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET HUF76419D3, HUF76419D3S
Data Sheet December 2001
20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging
JEDEC TO-251AA JEDEC TO-252AA
Features
• Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = 10V - rDS(ON) = 0.043Ω, VGS = 5V • Simulation Models - Temperature Compe |  Fairchild Semiconductor | mosfet |
| 2 | HUF76419D3S | 20A/ 60V/ 0.043 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET HUF76419D3, HUF76419D3S
Data Sheet October 1999 File Number 4668.1
20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging
JEDEC TO-251AA JEDEC TO-252AA
Features
• Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = 10V - rDS(ON) = 0.043Ω, VGS = 5V • Simulation Models - T |  Intersil Corporation | mosfet |
HUF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HUF75229P3 | 44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET HUF75229P3
Data Sheet December 2001
44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding perfor Fairchild Semiconductor mosfet | | |
| 2 | HUF75229P3 | 44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET HUF75229P3
Data Sheet June 1998 File Number 4536.1
44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in ou Intersil Corporation mosfet | | |
| 3 | HUF75307D3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re Fairchild Semiconductor mosfet | | |
| 4 | HUF75307D3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet June 1999 File Number
4353.6
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per Intersil Corporation mosfet | | |
| 5 | HUF75307D3S | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re Fairchild Semiconductor mosfet | | |
| 6 | HUF75307D3S | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet June 1999 File Number
4353.6
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per Intersil Corporation mosfet | | |
| 7 | HUF75307P3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re Fairchild Semiconductor mosfet | |
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