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Datasheet HSC226 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | HSC226 | Silicon Schottky Barrier Diode HSC226
Silicon Schottky Barrier Diode
ADE-208-831A (Z) Rev. 1 Aug. 2000 Features
• Low reverse current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC226 Laser Mark S4 Package Code UFP
Outline
Cathode mark Mark 1
S4
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 Hitachi Semiconductor |
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| 3 | HSC226 | Silicon Schottky Barrier Diode HSC226
SILICON SCHOTTKY BARRIER DIODE
Features • Low reverse current, low capacitance • Ultra small flat package is suitable for surface mount design
PINNING PIN 1 2 DESCRIPTION Cathode Anode
2
1
W
Top View Marking Code: "W" Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta |
 SEMTECH |
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| 2 | HSC226 | Silicon Schottky Barrier Diode SMD Type
Silicon Schottky Barrier Diode HSC226
Diodes
SOD-523
+0.05 0.3-0.05 +0.1 1.2-0.1
Unit: mm
+0.1 0.6-0.1
Low reverse current, Low capacitance. Ultra small Flat Package (UFP) is suitable for surface mount design.
+0.05 0.8-0.05
Features
+
-
+0.1 1.6-0.1
0.77max
0.07max
Absolute M a |
 Kexin |
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| 1 | HSC226 | Silicon Schottky Barrier Diode HSC226
Silicon Schottky Barrier Diode for High Speed Switching
REJ03G0599-0300 Rev.3.00 Sep 15, 2006
Features
• Low reverse current, Low capacitance. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC226 Cathode Mark S4 Package Name UF |
 Renesas |
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