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Datasheet HFD2N65F Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1HFD2N65F600V N-Channel MOSFET

HFD2N65F_HFU2N65F July 2015 HFD2N65F / HFU2N65F 600V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 2 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰
SemiHow
SemiHow
mosfet


HFD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1HFD1N60N-Channel MOSFET

HFD1N60_HFU1N60 Dec 2005 HFD1N60 / HFU1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.9 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ U
SemiHow
SemiHow
mosfet
2HFD1N60F600V N-Channel MOSFET

HFD1N60F_HFU1N60F Sep 2015 HFD1N60F / HFU1N60F 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰
SemiHow
SemiHow
mosfet
3HFD1N60SN-Channel MOSFET

HFD1N60S / HFU1N60S Sep 2009 HFD1N60S / HFU1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteri
SemiHow
SemiHow
mosfet
4HFD1N65N-Channel MOSFET

HFD1N65 / HFU1N65 April 2006 HFD1N65 / HFU1N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Character
SemiHow
SemiHow
mosfet
5HFD1N65SN-Channel MOSFET

HFD1N65S / HFU1N65S HFD1N65S / HFU1N65S 650V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ.)  Exte
SemiHow
SemiHow
mosfet
6HFD1N70N-Channel MOSFET

HFD1N70 / HFU1N70 Dec 2008 HFD1N70 / HFU1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.8 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characterist
SemiHow
SemiHow
mosfet
7HFD1N80N-Channel MOSFET

HFD1N80 / HFU1N80 April 2006 HFD1N80 / HFU1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characterist
SemiHow
SemiHow
mosfet
8HFD2SUBMINIATURE DIP RELAY

HFD2 SUBMINIATURE DIP RELAY Features •2 Form C contact,Polarized relay sensitivity 150mW • High • Fits standard 16 pin IC socket switching capacity 60W,125VA sealed for automatic wave soldering • High • Epoxy File No.:E133481 and cleaning CONTACT DATA Contact Arrangement Initial C
ETC
ETC
relay
9HFD2SUMINIATURE DIP RELAY

864/ @B2;9<91AB?5 49> ?5:1F Idg` Pj5AH8::;?8 Idg` Pj5AFSF8:7797@<8>;0Udibg` nd_` no\]g`1 FSF8:7797@<8><0N\o^cdib1 6KGVWTKU ] Kdbc n`indodq`A 8<7hY ] O\o^cdib no\i_\m_8= kdi LF nj^f`o ] Kdbc nrdo^cdib ^\k\^dotA 89
Hongfa
Hongfa
relay



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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