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Datasheet HFD2N65F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | HFD2N65F | 600V N-Channel MOSFET HFD2N65F_HFU2N65F
July 2015
HFD2N65F / HFU2N65F
600V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 2 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics | SemiHow | mosfet |
HFD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | HFD1N60 | N-Channel MOSFET HFD1N60_HFU1N60
Dec 2005
HFD1N60 / HFU1N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.9 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics U SemiHow mosfet | | |
2 | HFD1N60F | 600V N-Channel MOSFET HFD1N60F_HFU1N60F
Sep 2015
HFD1N60F / HFU1N60F
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics SemiHow mosfet | | |
3 | HFD1N60S | N-Channel MOSFET HFD1N60S / HFU1N60S
Sep 2009
HFD1N60S / HFU1N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteri SemiHow mosfet | | |
4 | HFD1N65 | N-Channel MOSFET HFD1N65 / HFU1N65
April 2006
HFD1N65 / HFU1N65
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Character SemiHow mosfet | | |
5 | HFD1N65S | N-Channel MOSFET HFD1N65S / HFU1N65S
HFD1N65S / HFU1N65S
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Exte SemiHow mosfet | | |
6 | HFD1N70 | N-Channel MOSFET HFD1N70 / HFU1N70
Dec 2008
HFD1N70 / HFU1N70
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.8 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characterist SemiHow mosfet | | |
7 | HFD1N80 | N-Channel MOSFET HFD1N80 / HFU1N80
April 2006
HFD1N80 / HFU1N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characterist SemiHow mosfet | | |
8 | HFD2 | SUBMINIATURE DIP RELAY HFD2
SUBMINIATURE DIP RELAY
Features
•2
Form C contact,Polarized relay sensitivity 150mW
• High • Fits
standard 16 pin IC socket switching capacity 60W,125VA sealed for automatic wave soldering
• High
• Epoxy
File No.:E133481
and cleaning
CONTACT DATA
Contact Arrangement Initial C ETC relay | | |
9 | HFD2 | SUMINIATURE DIP RELAY 864/
@B2;9<91AB?5 49> ?5:1F
Idg` Pj5AH8::;?8 Idg` Pj5AFSF8:7797@<8>;0Udibg` nd_` no\]g`1
FSF8:7797@<8><0N\o^cdib1
6KGVWTKU
] Kdbc n`indodq`A 8<7hY ] O\o^cdib no\i_\m_8= kdi LF nj^f`o ] Kdbc nrdo^cdib ^\k\^dotA 89 Hongfa relay | |
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Número de pieza | Descripción | Fabricantes | |
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