Datasheet HAT2201WP Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HAT2201WP	Silicon N Channel Power MOS FET Power Switching HAT2201WP Silicon N Channel Power MOS FET Power Switching REJ03G1679-0300 Rev.3.00 May 27, 2008 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PWS	Renesas Technology

HAT220 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HAT2201R	Silicon N Channel Power MOS FET Power Switching HAT2201R Silicon N Channel Power MOS FET Power Switching REJ03G0233-0300Z Rev.3.00 Apr.07.2004 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 mΩ typ. (at VGS = 10 V) Outline SOP-8	Renesas Technology
HAT2202C	Silicon N Channel Power MOS FET Power Switching HAT2202C Silicon N Channel MOS FET Power Switching REJ03G1236-0600 Rev.6.00 Oct 01, 2009 Features • Low on-resistance RDS(on) = 31 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 2.5 V gate drive devices. Outline RENESAS Pa	Renesas Technology
HAT2200WP	Silicon N Channel Power MOS FET Power Switching HAT2200WP Silicon N Channel Power MOS FET Power Switching REJ03G1678-0300 Rev.3.00 May 27, 2008 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 22 mΩ typ. (at VGS = 10 V) Outline RENES	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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