Datasheet H5N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
73	H5N1503P	Silicon N Channel MOS FET High Speed Power Switching H5N1503P Silicon N Channel MOS FET High Speed Power Switching REJ03G0186-0100Z Rev.1.00 Mar.10.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta	Renesas Technology
72	H5N1506P	Silicon N Channel MOS FET High Speed Power Switching H5N1506P Silicon N Channel MOS FET High Speed Power Switching REJ03G0389-0200 Rev.2.00 Jul 03, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3	Renesas Technology
71	H5N2001LD	Silicon N Channel MOS FET High Speed Power Switching H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1	Renesas Technology
70	H5N2001LM	Silicon N Channel MOS FET High Speed Power Switching H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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