Datasheet GT4122 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GT4122	Video Multiplier w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c	Gennum

GT4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GT45F123	Insulated Gate Bipolar Transistor GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications • • • • • 5th generation (trench gate structure) IGBT Enhancement-mode Low input capacitance: Cies = 2700pF (typ.) Peak collector current: ICP = 200 A (max) TO-22	Toshiba Semiconductor
GT40T301	Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm • • • • FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr	Toshiba Semiconductor
GT40T101	Silicon N Channel MOS Type INSULATED GATE BIPOLAR TRANSISTOR GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 HIGH POWER SWITCHING APPLICATIONS Unit: mm l Enhancement−Mode l High Speed l Low Saturation : tf = 0.4 µs (Max.) (IC = 40 A) : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta =	Toshiba Semiconductor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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