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Datasheet GA500TD60U Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1GA500TD60UHALF-BRIDGE IGBT DUAL INT-A-PAK

PD - 50048D GA500TD60U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparal
International Rectifier
International Rectifier
igbt


GA5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1GA500TD60UHALF-BRIDGE IGBT DUAL INT-A-PAK

PD - 50048D GA500TD60U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparal
International Rectifier
International Rectifier
datasheet GA500TD60U pdf
2GA50JT06-258Junction Transistor

GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features  225°C maximum operating temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Compatible with 5 V TTL Gate Drive  Temperature Independent Switching Performanc
GeneSiC
GeneSiC
datasheet GA50JT06-258 pdf
3GA50JT06-CALOFF Silicon Carbide Junction Transistor

Die Datasheet GA50JT06-CAL Normally – OFF Silicon Carbide Junction Transistor Features • 210°C maximum operating temperature • Gate Oxide Free SiC switch • Exceptional Safe Operating Area • Excellent Gain Linearity • Temperature Independent Switching Performance • Low Output Capacit
GeneSiC
GeneSiC
datasheet GA50JT06-CAL pdf
4GA50JT12-247Normally - OFF Silicon Carbide Junction Transistor

Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperatur
GeneSiC
GeneSiC
datasheet GA50JT12-247 pdf
5GA50JT12-CALJunction Transistor

Die Datasheet GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor Features  210 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capaci
GeneSiC
GeneSiC
datasheet GA50JT12-CAL pdf
6GA50JT17-247Junction Transistor

Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperatur
GeneSiC
GeneSiC
datasheet GA50JT17-247 pdf
7GA50JT17-CALJunction Transistor

Die Datasheet GA50JT17-CAL Normally – OFF Silicon Carbide Junction Transistor Features  210 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capaci
GeneSiC
GeneSiC
datasheet GA50JT17-CAL pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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