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Datasheet FTW20N50A Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Comprar ahora
1FTW20N50A N-Channel MOSFET

FTW20N50A General Description FTW20N50A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the Ro
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FTW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1 FTW20N50A N-Channel MOSFET

FTW20N50A General Description FTW20N50A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for s
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datasheet FTW20N50A pdf
2 FTW20N60A N-Channel Enhancement

Empower The World InPower Product Lines Confidential Discrete Power Products Empower The World IPS Baseline Discrete Power Power IC IC MOSFET BJT Rectifier IGBT Planar Trench Depletion CoolMOS Mode NPN P-N Schottky Planar Trench Confidential 60-1200V 20-100V 500-850V 500-900
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datasheet FTW20N60A pdf
3 FTW30N20A N-Channel Enhancement

Empower The World InPower Product Lines Confidential Discrete Power Products Empower The World IPS Baseline Discrete Power Power IC IC MOSFET BJT Rectifier IGBT Planar Trench Depletion CoolMOS Mode NPN P-N Schottky Planar Trench Confidential 60-1200V 20-100V 500-850V 500-900
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datasheet FTW30N20A pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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