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Datasheet FTW20N50A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | FTW20N50A | N-Channel MOSFET FTW20N50A
General Description
FTW20N50A, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the Ro
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FTW Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | FTW20N50A | N-Channel MOSFET
FTW20N50A
General Description
FTW20N50A, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for s
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2 | FTW20N60A | N-Channel Enhancement
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Discrete Power Products
Empower The World
IPS Baseline Discrete Power Power IC IC
MOSFET
BJT
Rectifier
IGBT
Planar
Trench
Depletion CoolMOS Mode
NPN
P-N
Schottky
Planar
Trench
Confidential
60-1200V
20-100V
500-850V
500-900
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3 | FTW30N20A | N-Channel Enhancement
Empower The World
InPower Product Lines
Confidential
Discrete Power Products
Empower The World
IPS Baseline Discrete Power Power IC IC
MOSFET
BJT
Rectifier
IGBT
Planar
Trench
Depletion CoolMOS Mode
NPN
P-N
Schottky
Planar
Trench
Confidential
60-1200V
20-100V
500-850V
500-900
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Número de pieza | Descripción | Fabricantes | |
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