| P/N |
Descripción |
Fabr. |
PDF |
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FSYC260D |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYC260D, FSYC260R
July 1998
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K R
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FSYC260D1 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYC260D, FSYC260R
July 1998
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K R
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FSYC260D3 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYC260D, FSYC260R
July 1998
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K R
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