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Descripción |
Fabr. |
PDF |
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FSYC163D |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYC163D, FSYC163R
Data Sheet May 1999 File Number
4740
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi
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FSYC163D1 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYC163D, FSYC163R
Data Sheet May 1999 File Number
4740
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi
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FSYC163D3 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYC163D, FSYC163R
Data Sheet May 1999 File Number
4740
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi
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