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Datasheet FSYC055D3 Equivalent ( PDF ) - MOSFET

P/N Descripción Fabr. PDF
FSYC055D3 Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

FSYC055D, FSYC055R July 1998 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K R
Intersil Corporation Intersil Corporation FSYC055D3 datasheet



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P/N Descripción Fabr. PDF
2N3904

NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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