Datasheet FSJ9160 Equivalent ( PDF ) - MOSFET

P/N	Descripción	Fabr.	PDF
FSJ9160	44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Semiconductor FSJ9055D, FSJ9055R 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in partic
FSJ9160D	44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Semiconductor FSJ9055D, FSJ9055R 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in partic
FSJ9160D1	44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Semiconductor FSJ9055D, FSJ9055R 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in partic
FSJ9160D3	44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs FSJ9160D, FSJ9160R June 1998 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul
FSJ9160R	44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs FSJ9160D, FSJ9160R June 1998 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

FSJ9 Datasheet ( Hoja de datos ) - Resultados que coinciden

P/N	Descripción	Fabr.	PDF
FSJ9055D	55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
FSJ9055D1	55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
FSJ9055D3	55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
FSJ9055R	55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
FSJ9055R1	55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
FSM10	Timer
FS-01BL	LED Flashlight

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P/N	Descripción	Fabr.	PDF
2N3904	NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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