| P/N |
Descripción |
Fabr. |
PDF |
|
FSF9250D |
15A/ -200V/ 0.290 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
FSF9250D, FSF9250R
June 1998
15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul
|
 |
 |
|
FSF9250D1 |
15A/ -200V/ 0.290 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
FSF9250D, FSF9250R
June 1998
15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul
|
|
|
|
FSF9250D3 |
15A/ -200V/ 0.290 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
FSF9250D, FSF9250R
June 1998
15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul
|
|
|
