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Datasheet FMB100 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FMB100 | NPN Multi-Chip General Purpose Amplifier FMB100
Discrete POWER & Signal Technologies
FMB100
C2 E1 C1
B2 E2
pin #1 B1
SuperSOT™-6
Mark: .NA
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings*
Sy |  Fairchild Semiconductor | amplifier |
FMB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FMB-22H | Schottky Barrier Diodes 20V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
20V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) Mass Remarks Fig. (°C/ W) (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
IFSM (A)
50Hz Half-cycle Sinewave Single Shot
T  Sanken electric diode | | |
| 2 | FMB-22L | Schottky Barrier Diodes 20V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
20V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) Mass Remarks Fig. (°C/ W) (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
IFSM (A)
50Hz Half-cycle Sinewave Single Shot
T Sanken electric diode | | |
| 3 | FMB-2306 | 30A Schottky barrier diode in TO220F package 30A Schottky barrier diode in TO220F package
FMB-2306
sFeature
qI F =30A in TO220F package qTj=150°C guaranteed
sAbsolute maximum ratings
Parameter VRM IF(AV) IFSM I t Tj Tstg
2
s Electrical characteristics
Conditions Parameter VF IR Ratings 0.7max 8.0max 115max 400max 4.0max Unit V mA mA mA °C Sanken electric diode | | |
| 4 | FMB-24 | Schottky Barrier Diodes 40V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
40V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) (°C/ W) Mass Fig. (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (°C)
Tstg (°C)
max Sanken electric diode | | |
| 5 | FMB-24H | Schottky Barrier Diodes 40V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
40V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) (°C/ W) Mass Fig. (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (°C)
Tstg (°C)
max Sanken electric diode | | |
| 6 | FMB-24L | Schottky Barrier Diodes 40V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
40V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) (°C/ W) Mass Fig. (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (°C)
Tstg (°C)
max Sanken electric diode | | |
| 7 | FMB-24L | Schottky Barrier Diodes
Schottky Barrier Diodes
VRM (V) Package Part Number I F (AV) (A) 0.5 1.0 1.5 2.0 2.0 3.0 5.0 6.0 1.0 1.0 1.0 1.5 1.7 2.5 3.0 3.0 5.0 10.0 15 4.0 6.0 10.0 10 10 12 15 15 15 15 20 30 30 IFSM (A)
50Hz
Half-cycle Sinewave Single Shot
40V
VF (V) max 0.58 0.55 0.55 0.5 0.6 0.55 0.55  Allegro Microsystems diode | | |
| 8 | FMB-24M | Schottky Barrier Diodes 40V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
40V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) (°C/ W) Mass Fig. (g) IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (°C)
Tstg (°C)
max Sanken electric diode | | |
| 9 | FMB-26 | Schottky Barrier Diodes 60V Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
60V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) Mass Remarks Fig. (°C/ W) (g) 1 Chip A IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (°C Sanken electric diode | |
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