Datasheet FDT458P Equivalent ( PDF ) - Mosfet

FDT458P June 2001 FDT458P 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC, DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

FDT1600N10ALZ N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ November 2013 Features RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A Low Gate Charge (Typ. 2.9 nC) Low Crss (Typ. 2.04 pF) Fas

FDT3612 March 2001 FDT3612 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC, DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching an

FDT3N40 N-Channel UniFETTM MOSFET FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A Low Gate Charge (Typ. 4.5 nC) Low Crss (Typ. 3.7 pF) 100% Avalanche Tested Applications LCD, LED TV Lighting Uninterruptible Power Supply April 20

FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low ga

FDT439N June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is esp

August 1998 FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimiz

FDT458P June 2001 FDT458P 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC, DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs featu