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Datasheet FDT458P Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1FDT458P30V P-Channel PowerTrench MOSFET

FDT458P June 2001 FDT458P 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs featur
Fairchild Semiconductor
Fairchild Semiconductor
mosfet


FDT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1FDT1600N10ALZMOSFET, Transistor

FDT1600N10ALZ — N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ November 2013 Features • RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A • RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A • Low Gate Charge (Typ. 2.9 nC) • Low Crss (Typ
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDT1600N10ALZ pdf
2FDT3612100V N-Channel PowerTrench MOSFET

FDT3612 March 2001 FDT3612 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDT3612 pdf
3FDT3N40MOSFET, Transistor

FDT3N40 N-Channel UniFETTM MOSFET FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features • RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A • Low Gate Charge (Typ. 4.5 nC) • Low Crss (Typ. 3.7 pF) • 100% Avalanche Tested Applications • LCD/LED TV • Lighting • Uninterruptible Po
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDT3N40 pdf
4FDT434PP-Channel 2.5V Specified PowerTrench MOSFET

FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDT434P pdf
5FDT439NN-Channel 2.5V Specified EnhancementMode Field Effect Transistor

FDT439N June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is esp
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDT439N pdf
6FDT457NN-Channel Enhancement Mode Field Effect Transistor

August 1998 FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimiz
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDT457N pdf
7FDT458P30V P-Channel PowerTrench MOSFET

FDT458P June 2001 FDT458P 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs featur
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDT458P pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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