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Datasheet FDP8443_F085-PDF.HTML Equivalent ( PDF )

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N.º Número de pieza Descripción Fabricantes PDF
1FDP020N06BN-Channel PowerTrench MOSFET

FDP020N06B — N-Channel PowerTrench® MOSFET FDP020N06B N-Channel PowerTrench® MOSFET 60 V, 313 A, 2 mΩ November 2013 Features • RDS(on) = 1.65 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 194 nC • Soft Reverse-Recovery Body Diode •
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDP020N06B pdf
2FDP023N08BMOSFET, Transistor

FDP023N08B — N-Channel PowerTrench® MOSFET FDP023N08B N-Channel PowerTrench® MOSFET 75 V, 242 A, 2.35 mΩ November 2013 Features • RDS(on) = 1.96 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A • Low FOM RDS(on)*QG • Low Reverse Recovery Charge, Qrr • Soft Reverse Recovery Body Diode • Enables
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDP023N08B pdf
3FDP025N06MOSFET, Transistor

FDP025N06 — N-Channel PowerTrench® MOSFET FDP025N06 N-Channel PowerTrench® MOSFET 60 V, 265 A, 2.5 mΩ November 2013 Features • RDS(on) = 1.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) •
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDP025N06 pdf
4FDP027N08BN-Channel PowerTrench MOSFET

FDP027N08B — N-Channel PowerTrench® MOSFET FDP027N08B N-Channel PowerTrench® MOSFET 80 V, 223 A, 2.7 mΩ November 2013 Features • RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 112 nC • Soft Reverse-Recovery Body Diode �
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDP027N08B pdf
5FDP030N06MOSFET, Transistor

FDP030N06 — N-Channel PowerTrench® MOSFET FDP030N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.2 mΩ November 2013 Features • RDS(on) = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) •
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDP030N06 pdf
6FDP030N06B_F102MOSFET, Transistor

FDP030N06B_F102 — N-Channel PowerTrench® MOSFET FDP030N06B_F102 N-Channel PowerTrench® MOSFET 60 V, 195 A, 3.1 mΩ November 2013 Features • RDS(on) = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 78 nC • Soft Reverse-Recovery Body
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDP030N06B_F102 pdf
7FDP032N08MOSFET, Transistor

FDP032N08 — N-Channel PowerTrench® MOSFET FDP032N08 N-Channel PowerTrench® MOSFET 75 V, 235 A, 3.2 mΩ November 2013 Features • RDS(on) = 2.5 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) •
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDP032N08 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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