Datasheet FDN361 Equivalent ( PDF )

FDN361AN April 1999 FDN361AN N-Channel, Logic Level, PowerTrenchΤΜ General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features 1.8 A, 30 V. RDS(on) = 0.100 Ω @ VGS = 10 V RDS(on) = 0

FDN361AN April 1999 FDN361AN N-Channel, Logic Level, PowerTrenchΤΜ General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features 1.8 A, 30 V. RDS(on) = 0.100 Ω @ VGS = 10 V RDS(on) = 0

FDN361BN 30V N-Channel, Logic Level, PowerTrench® MOSFET October 2005 FDN361BN 30V N-Channel, Logic Level, PowerTrench® MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are