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Datasheet FDMS86150 Equivalent ( PDF ) - MOSFET |
| P/N | Descripción | Fabr. | |
| FDMS86150 | N-Channel MOSFET FDMS86150 N-Channel PowerTrench® MOSFET
October 2012
FDMS86150
N-Channel PowerTrench® MOSFET
100 V, 60 A, 4.85 mΩ Features General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Max rDS(on) = 4.85 mΩ at VGS
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| FDMS86150ET100 | MOSFET, Transistor FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET
FDMS86150ET100
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 128 A, 4.85 mΩ
January 2015
Features
Extended TJ rating to 175°C Shielded Gate MOSFET Technology
Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A Advanced Package and Silicon combination for low rDS(on)
and high effic
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FDMS Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| FDMS2572 | N-Channel UltraFET Trench MOSFET
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| FDMS8690 | N-Channel PowerTrench MOSFET
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| FDMS8660S | N-Channel PowerTrench SyncFET
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| FDMS3572 | N-Channel UltraFET Trench MOSFET
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| FDMS8670S | N-Channel PowerTrench SyncFETTM
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| FDS4835 | P-Channel 30-V (D-S) MOSFET
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| FDC37B80X | Enhanced Super I/O Controller
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nuevas actualizaciones
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| 2N3904 | NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects. |
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