Datasheet FDMS86101 Equivalent ( PDF ) - MOSFET

FDMS86101 N-Channel PowerTrench® MOSFET October 2012 FDMS86101 N-Channel PowerTrench® MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 8 mΩ at VGS = 10 V

FDMS86101A N-Channel PowerTrench® MOSFET April 2012 FDMS86101A N-Channel PowerTrench® MOSFET 100 V, 60 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 8 mΩ at VGS = 10 V

FDMS86101DC N-Channel Dual CoolTM Power Trench® MOSFET February 2012 FDMS86101DC N-Channel Dual CoolTM Power Trench® MOSFET 100 V, 60 A, 7.5 mΩ Features Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A High performance technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant General Desc