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Datasheet FDMS7670 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1FDMS7670N-Channel MOSFET

FDMS7670 N-Channel PowerTrench® MOSFET April 2009 FDMS7670 N-Channel PowerTrench® MOSFET 30 V, 3.8 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchro
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
2FDMS7670ASN-Channel MOSFET

FDMS7670AS N-Channel PowerTrench® SyncFETTM September 2009 FDMS7670AS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 3 mΩ Features General Description The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have b
Fairchild Semiconductor
Fairchild Semiconductor
mosfet


FDM Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1FDM-2BFDM-2B

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ETC
ETC
datasheet FDM-2B pdf
2FDM100-0045SPBuck Chopper

FDM 100-0045SP Buck Chopper with Trench Power MOSFET and Schottky Diode in ISOPLUS i4-PACTM Preliminary data 3 5 4 ID25 = 100 A = 55 V VDSS RDSon typ. = 5.7 mΩ 1 2 5 MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum Ratings 55 ±20 100 80 V V A A
IXYS Corporation
IXYS Corporation
datasheet FDM100-0045SP pdf
3FDM21-05QCQ-Class Power MOSFETs

FMD 21-05QC FDM 21-05QC Q-Class Power MOSFETs Chopper Topologies in ISOPLUS i4-PACTM FMD 3 3 5 4 1 2 2 4 ID25 = 21 A = 500 V VDSS RDSon typ. = 190 mΩ FDM Preliminary data 1 5 MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum R
IXYS Corporation
IXYS Corporation
datasheet FDM21-05QC pdf
4FDM2452NZMonolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

FDM2452NZ July 2005 FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame w
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDM2452NZ pdf
5FDM3300NZMonolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

FDM3300NZ February 2003 FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET   General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead f
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDM3300NZ pdf
6FDM3622N-Channel PowerTrench MOSFET

FDM3622 N-Channel PowerTrench® MOSFET January 2005 FDM3622 N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ Features r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Singl
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDM3622 pdf
7FDM606PP-Channel 1.8V Logic Level Power Trench MOSFET

FDM606P July 2002 FDM606P P-Channel 1.8V Logic Level Power Trench® MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDM606P pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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