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Datasheet FDMS3664S Equivalent ( PDF ) - MOSFET |
| P/N | Descripción | Fabr. | |
| FDMS3664S | MOSFET, Transistor FDMS3664S PowerTrench® Power Stage
FDMS3664S
PowerTrench® Power Stage
January 2015
Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A Low inductance packaging sh
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