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Datasheet FDMS037N08B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FDMS037N08B | MOSFET, Transistor FDMS037N08B — N-Channel PowerTrench® MOSFET
FDMS037N08B
N-Channel PowerTrench® MOSFET
75 V, 100 A, 3.7 mΩ
November 2013
Features
• RDS(on) = 3.01 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Low FOM RDS(on)*QG • Low Reverse Recovery Charge, Qrr = 80 nC • Soft Reverse Recovery Body Diode • |  Fairchild Semiconductor | mosfet |
FDM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FDM-2B | FDM-2B w
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 ETC data | | |
| 2 | FDM100-0045SP | Buck Chopper FDM 100-0045SP
Buck Chopper with Trench Power MOSFET and Schottky Diode
in ISOPLUS i4-PACTM
Preliminary data
3 5 4
ID25 = 100 A = 55 V VDSS RDSon typ. = 5.7 mΩ
1
2
5
MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum Ratings 55 ±20 100 80 V V A A
 IXYS Corporation data | | |
| 3 | FDM21-05QC | Q-Class Power MOSFETs
FMD 21-05QC FDM 21-05QC
Q-Class Power MOSFETs
Chopper Topologies in ISOPLUS i4-PACTM
FMD
3 3 5 4 1 2 2 4
ID25 = 21 A = 500 V VDSS RDSon typ. = 190 mΩ
FDM
Preliminary data
1 5
MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum R IXYS Corporation mosfet | | |
| 4 | FDM2452NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET FDM2452NZ
July 2005
FDM2452NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame w Fairchild Semiconductor mosfet | | |
| 5 | FDM3300NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET FDM3300NZ
February 2003
FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead f Fairchild Semiconductor mosfet | | |
| 6 | FDM3622 | N-Channel PowerTrench MOSFET FDM3622 N-Channel PowerTrench® MOSFET
January 2005
FDM3622 N-Channel PowerTrench® MOSFET
100V, 4.4A, 60mΩ Features
r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Singl Fairchild Semiconductor mosfet | | |
| 7 | FDM606P | P-Channel 1.8V Logic Level Power Trench MOSFET FDM606P
July 2002
FDM606P
P-Channel 1.8V Logic Level Power Trench® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for Fairchild Semiconductor mosfet | | |
| 8 | FDM6296 | Single N-Channel / Logic-Level / PowerTrench MOSFET FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET
December 2004
FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET
Features
■ 11.5 A, 30 V RDS(ON) = 10.5 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V ■ Low Qg, Qgd and Rg for efficient switching performance ■ Low Pro� Fairchild Semiconductor mosfet | | |
| 9 | FDMA1023PZ | Dual P-Channel PowerTrench MOSFET FDMA1023PZ Dual P-Channel PowerTrench® MOSFET
March 2007
FDMA1023PZ
–20V, –3.7A, 72mΩ Features
Dual P-Channel PowerTrench® MOSFET
General Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable Fairchild Semiconductor mosfet | |
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