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Datasheet FDI030N06 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1FDI030N06N-Channel MOSFET

FDI030N06 N-Channel PowerTrench® MOSFET June 2009 FDI030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features • RDS(on) = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and
Fairchild Semiconductor
Fairchild Semiconductor
mosfet


FDI Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1FDI025N06MOSFET, Transistor

FDI025N06 N-Channel PowerTrench® MOSFET June 2008 FDI025N06 N-Channel PowerTrench® MOSFET 60V, 265A, 2.5mΩ tm Features • RDS(on) = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High po
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDI025N06 pdf
2FDI030N06N-Channel MOSFET

FDI030N06 N-Channel PowerTrench® MOSFET June 2009 FDI030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features • RDS(on) = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDI030N06 pdf
3FDI038AN06A0N-Channel PowerTrench MOSFET 60V/ 80A/ 3.8m

FDP038AN06A0 / FDI038AN06A0 August 2002 FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ Features • r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and R
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDI038AN06A0 pdf
4FDI040N06N-Channel MOSFET

FDI040N06 N-Channel PowerTrench® MOSFET June 2009 FDI040N06 N-Channel PowerTrench® MOSFET 60V, 168A, 4.0mΩ Features • RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDI040N06 pdf
5FDI045N10AN-Channel PowerTrench MOSFET

FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET FDP045N10A / FDI045N10A N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.5 mΩ November 2013 Features • RDS(on) = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Fast Switching Speed • Low Gate Charge, QG = 54 nC (Typ.) • High Performanc
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDI045N10A pdf
6FDI047AN08A0N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m

FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ Features • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capa
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDI047AN08A0 pdf
7FDI047AN08A0N-Channel PowerTrench MOSFET

FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ Features • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capa
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FDI047AN08A0 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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