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Datasheet F12C15PT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | F12C15PT | FAST RECOVERY RECTIFIER CHENMKO ENTERPRISE CO.,LTD
FAST RECOVERY RECTIFIER
VOLTAGE RANGE 50 - 600 Volts CURRENT 12 Amperes
F12C05PT THRU
F12C60PT
FEATURES
* Plastic package has Underwriters Laboratory Flammability Classification 94V-0
* Dual rectifier construction, positive centertap * Glass passivated chip junctions * L |  CHENMKO ENTERPRISE | rectifier |
F12 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | F1200A | High efficiency fast silicion rectifier diode F 1200A ... F 1200G
Axial leaded diode
.3
5 -7 5 -@ 5 -2 5 -A
<
=
4
=
=
,
1,
4
=
=
,
#<< #
( -
"
#<1 #
( -
"
=
=
3
05 6 '( 7 0< 6 - 7 0<< 6 -'( 7
; =
,
#5? '%  Semikron rectifier | | |
| 2 | F1200A | FAST RECOVERY RECTIFIER DIODES Certificate TH97/10561QM
Certificate TW00/17276EM
F1200A, F1200D
FAST RECOVERY RECTIFIER DIODES
PRV : 50 - 200 Volts Io : 12 Amperes
D6
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for  EIC rectifier | | |
| 3 | F1200A | Fast Silicon Rectifiers F1200A, F1200D Fast Silicon Rectifiers
Version 2004-04-06
Schnelle Silizium Gleichrichter
Nominal current – Nennstrom
Ø8
±0.1
12 A 50V, 200 V Ø 8 x 7.5 [mm] P-600 Style 1.5 g
Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. –  Diotec Semiconductor rectifier | | |
| 4 | F1200B | High efficiency fast silicion rectifier diode F 1200A ... F 1200G
Axial leaded diode
.3
5 -7 5 -@ 5 -2 5 -A
<
=
4
=
=
,
1,
4
=
=
,
#<< #
( -
"
#<1 #
( -
"
=
=
3
05 6 '( 7 0< 6 - 7 0<< 6 -'( 7
; =
,
#5? '% Semikron rectifier | | |
| 5 | F1200D | High efficiency fast silicion rectifier diode F 1200A ... F 1200G
Axial leaded diode
.3
5 -7 5 -@ 5 -2 5 -A
<
=
4
=
=
,
1,
4
=
=
,
#<< #
( -
"
#<1 #
( -
"
=
=
3
05 6 '( 7 0< 6 - 7 0<< 6 -'( 7
; =
,
#5? '% Semikron rectifier | | |
| 6 | F1200D | FAST RECOVERY RECTIFIER DIODES Certificate TH97/10561QM
Certificate TW00/17276EM
F1200A, F1200D
FAST RECOVERY RECTIFIER DIODES
PRV : 50 - 200 Volts Io : 12 Amperes
D6
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for EIC rectifier | | |
| 7 | F1200D | Fast Silicon Rectifiers F1200A, F1200D Fast Silicon Rectifiers
Version 2004-04-06
Schnelle Silizium Gleichrichter
Nominal current – Nennstrom
Ø8
±0.1
12 A 50V, 200 V Ø 8 x 7.5 [mm] P-600 Style 1.5 g
Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. – Diotec Semiconductor rectifier | | |
| 8 | F1200G | High efficiency fast silicion rectifier diode F 1200A ... F 1200G
Axial leaded diode
.3
5 -7 5 -@ 5 -2 5 -A
<
=
4
=
=
,
1,
4
=
=
,
#<< #
( -
"
#<1 #
( -
"
=
=
3
05 6 '( 7 0< 6 - 7 0<< 6 -'( 7
; =
,
#5? '% Semikron rectifier | | |
| 9 | F1206 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly  Polyfet RF Devices transistor | |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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