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Datasheet D2118 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1D2118NPN Transistor, 2SD2118

Low VCE(sat) transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type NPN silicon transistor ROHM : CPT3 EIAJ
ROHM Semiconductor
ROHM Semiconductor
data
2D2118NPN Plastic Encapsulated Transistor

Elektronische Bauelemente 2SD2118 5A , 50V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics D-Pack (TO-252) CLASSIFICATION OF
SeCoS
SeCoS
transistor


D21 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1D2100NPN Transistor, 2SD2100

Ordering number:EN3176A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1397/2SD2100 Compact Motor Driver Applications Features · Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between base and emitter. · Large current capacity. www.DataSheet
Sanyo Semicon Device
Sanyo Semicon Device
data
2D2101NPN Transistor, 2SD2101

2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 3 kΩ (Typ) 150 Ω (Typ) 3 2SD2101 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base volta
Hitachi Semiconductor
Hitachi Semiconductor
data
3D2102NPN Transistor, 2SD2102

2SD2102 Transient Thermal Resistance Thermal resistance θj-c (°C/W) 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time t (s)
Hitachi Semiconductor
Hitachi Semiconductor
data
4D2103NPN Transistor, 2SD2103

2SD2103 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2.2 kΩ (Typ) 3 2SD2103 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to ba
Hitachi Semiconductor
Hitachi Semiconductor
data
5D2104NPN Transistor, 2SD2104

2SD2104 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2 kΩ (Typ) 200 Ω (Typ) 3 2SD2104 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage
Hitachi Semiconductor
Hitachi Semiconductor
data
6D2105Silicon NPN Triple Diffused

2SD2105 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 1.5 kΩ (Typ) 130 Ω (Typ) 3 12 3 Free Datasheet http://www.nDatasheet.com 2SD2105 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Colle
Hitachi
Hitachi
data
7D2107NPN Transistor, 2SD2107

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003
Renesas
Renesas
data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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