Datasheet D1265 Equivalent ( PDF )

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1265 2SD1265A DESCRIPTION www.data·sWheietht4uT.cOom-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For audio frequency power applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=

SEMICONDUCTOR RRooHHSS SEMICONDUCTOR Fig.1 Maximuam forward voltage drop characteristics D12000W Series RRooHHSS Fig.2 Surge forward current vs pulse length Fig.3 Forward power loss vs. Average forward current sine waveform Fig.4 Forward power loss vs. Average forward current,square waveform F

TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 12.5V 500MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss USEFUL P

TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 12.5V 500MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss USEFUL P

TetraFET D1202UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W 12.5V 500MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss USEFUL P

TetraFET D1202UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W 12.5V 500MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss USEFUL P

TetraFET D1203UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W 12.5V 500MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN F G H K I J SUITABLE FOR BROAD BAND APPLICATIONS DRAIN GATE DM PIN 1 PIN 3 SOURCE SO

TetraFET D1204UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W 12.5V 500MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss 5 4 H I F M K J N DT PIN 1 PI