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Datasheet D10SB20 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1D10SB2010A(SIP) BRIDGE RECTIFIERS

Leshan Radio Company
Leshan Radio Company
rectifier
2D10SB20SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER

SHANGHAI SUNRISE ELECTRONICS CO., LTD. D10SB10 THRU D10SB100 SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 10A FEATURES • Glass passivated junction chip • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique •
Shanghai Sunrise Electronics
Shanghai Sunrise Electronics
rectifier
3D10SB20Single-phase Silicon Bridge Rectifier

SIYU R 塑封硅整流桥堆 反向电压 200---800V 正向电流 10 A D5 3.0*45 0 30.3 29.7 4.8 4.4 3.8 3.4 D10SB20......D10SB80 Single-phase Silicon Bridge Rectifier Reverse Voltage 200 to 800V Forward Current 10A 特征 Features ·反向漏电流低 Low reverse leakage High forward surge capabil
SIYU
SIYU
rectifier
4D10SB20Molding Single-Phase Bridge Rectifier

Elektronische Bauelemente D10SB10 ~ D10SB100 100 V ~ 1000 V 10.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant FEATURES  Plastic Package has Underwriters Laboratory Flammability Cla
SeCoS
SeCoS
rectifier


D10 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1D10Memory Micromodules General Information for D1/ D2 and C Packaging

D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging s Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding inte
STMicroelectronics
STMicroelectronics
datasheet D10 pdf
2D1000NPN Transistor, 2SD1000

Renesas
Renesas
datasheet D1000 pdf
3D1001NPN Transistor, 2SD1001

Renesas
Renesas
datasheet D1001 pdf
4D1001UKGOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED

TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D 4 M 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIA
Seme LAB
Seme LAB
datasheet D1001UK pdf
5D1002UKMETAL GATE RF SILICON FET

MECHANICAL DATA A B C 1 4 M 2 3 F D E G HK PIN 1 PIN 3 SOURCE SOURCE DA PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.1
Seme LAB
Seme LAB
datasheet D1002UK pdf
6D1003UKMETAL GATE RF SILICON FET

TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIA
Seme LAB
Seme LAB
datasheet D1003UK pdf
7D1004METAL GATE RF SILICON FET

TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I F M K J N • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss
Seme LAB
Seme LAB
datasheet D1004 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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