Datasheet D10C20 Equivalent ( PDF )

16.0AMP SUPER FASTER RECOVERY RECTIFIERS Max Ratings 25C Peak Repetitive Reverse Voltage working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Current per leg Tc=150C @ Rated Vdc Repetitive Peak Forward Surge Current @ Rated Vdc Square Wave, 20KHz, Tc=150C Non-Repetitive Peak Forward Surge Current @ Rated Load Cond., 1, 2 Wave, Single Phase, 60H- Operating

D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging s Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: Support for the chip Electrical contacts Suitable embedding interface for

TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D 4 M 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W 28V 175MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN G H K I J SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS Tol. 0.

MECHANICAL DATA A B C 1 4 M 2 3 F D E G HK PIN 1 PIN 3 SOURCE SOURCE DA PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.1

TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W 28V 175MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN F G H K I J SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NO

TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W 28V 175MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN H I F M K J N SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS C