Datasheet D103 Equivalent ( PDF ) - Gate

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Power Dissipation: PC= 25W(Max)@TC=25℃ Complement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO V

TetraFET D1031UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL. 2.313 ± 0.2 4 3 3.00 2.07 0.381 2 PL. 2 PL. 5 1.27 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 28V 1GH- SINGLE ENDED 0.360 ± 0.005 6 1.27 6.50 ± 0.15 2 1 0.47 2 PL. 0.80 4 PL. 4.90 ± 0.15 7 1.27 8 0.10 R. TYP. FEATURES 0.10 TYP.

TetraFET D1031UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL. 2.313 ± 0.2 4 3 3.00 2.07 0.381 2 PL. 2 PL. 5 1.27 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 28V 1GH- SINGLE ENDED 0.360 ± 0.005 6 1.27 6.50 ± 0.15 2 1 0.47 2 PL. 0.80 4 PL. 4.90 ± 0.15 7 1.27 8 0.10 R. TYP. FEATURES 0.10 TYP.

TetraFET D1034UK METAL GATE RF SILICON FET MECHANICAL DATA B A C E (2 pls) K 1 2 3 4 F G 8 J Typ. 7 6 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W 28V 500MH- PUSH PULL FEATURES SIMPLIFIED AMPLIFIER DESIGN D M Q P I N O H SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN 13 dB MINIMUM DD PIN 1 PIN 3 PIN 5 PIN 7 SOURCE (