Datasheet D1007 Equivalent ( PDF ) - Gate

DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and, or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional informa

TetraFET D1007UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W 28V 500MH- PUSH PULL FEATURES SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss USEFUL PO at 1 GH- LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I