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Datasheet CS830 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | CS830 | VDMOS Transistors 华晶分立器件
CS830
CS830 型 VDMOS 晶体管
1. 概述与特点
CS830 型 VDMOS 晶体管，主要用于功率开关。 其特点如下： ● 开关速度快 ● 可并联使用 ● 驱动简单 ● 封装形式：TO-220AB
10.7max
4.8max 1.4max φ3.84 6.9max
2. 电特性
2.1 极限值 � |
 ETC |
 |
| 7 | CS830 | N-Channel MOSFET IRF830(CS830)
用途:用于高效 DC/DC 转换和功率开关。
N-Channel MOSFET/N 沟 MOS 晶体管
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
特点: 低栅电荷,低反馈电容,开关速度快。
Features: Low gate ch |
 LZG |
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| 6 | CS8305E | 5.0W mono / ultra-low EMI / filterless Class-D audio amplifier 上海智浦欣微电子有限公司 Chipstar Micro-electronics
CS8305E
5.0W单声道、超低EMI、无滤波器D类音频功放
概要
C S 8 3 0 5 E是 一 款 高 效 率 ， 超 低E M I，5 . 0 W单 声 道 Ｄ 类 音 频放大器。CS8305E无需滤波器的PWM调制结构减少了 外 部 |
 Chipstar Micro-electronics |
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| 5 | CS830A3RD | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS830 A3RD
○R
General Description：
CS830 A3RD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be |
 Huajing Microelectronics |
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