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Datasheet CS630 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | CS630 | Phase Control Thyristor Phase Control Thyristor
V
CS 630 ITRMS = 1400 A
ITAVM = 630 A VRRM = 1200 - 1600
VRSM VDSM V 1200 1400 1600
V RRM V DRM V
Type
1 2 2 4
3
3 4
1200 1400 1600
CS 630-12io1 CS 630-14io1 CS 630-16io1
1
Symbol ITRMS ITAVM I TSM
Test Conditions TC = 85° C; 180° sine TVJ = 45° C; VR = 0 TVJ = T |
 IXYS Corporation |
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| 6 | CS630A3H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS630 A3H
○R
General Description：
CS630 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance
VDSS ID PD(TC=25℃) RDS(ON)Typ
200 9 83
0.23
t |
 Huajing Microelectronics |
|
| 5 | CS630A4H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS630 A4H
○R
General Description：
CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance
VDSS ID PD(TC=25℃) RDS(ON)Typ
200 9 83
0.23
t |
Huajing Microelectronics |
|
| 4 | CS630A8H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS630 A8H
○R
General Description：
CS630 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
200 9 83
0.23
performance and enhance t |
Huajing Microelectronics |
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