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Datasheet CS2N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | CS2N60 | N-CHANNEL MOSFET BR2N60(CS2N60)
N-CHANNEL MOSFET/N 沟道 MOS 晶体管
用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low |
 LZG |
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| 9 | CS2N60 | VDMOS Transistor 华晶分立器件
CS2N60(F)
CS2N60(F)型 VDMOS 晶体管
1.概述与特点
CS2N60(F)是 N 沟道 600V 系列 VDMOS 晶体管，主要用于电源适配器、充电器等各种功率开 关电路。 具有如下特点： ● 开关速度快 ● 通态电阻小 ● 可并联使用 ● 驱动简单 |
 ETC |
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| 8 | CS2N60A3H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS2N60 A3H
○R
General Description：
VDSS
600 V
CS2N60 A3H, the silicon N-channel Enhanced ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
3.6 Ω
performa |
 Huajing Microelectronics |
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| 7 | CS2N60A4H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS2N60 A4H
○R
General Description：
VDSS
600 V
CS2N60 A4H, the silicon N-channel Enhanced ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
3.6 Ω
performa |
Huajing Microelectronics |
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