Datasheet CS1N65B3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CS1N65B3	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS1N65 B3 ○R General Description： CS1N65 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 1.5 32 8.5 performance and enhance	Huajing Microelectronics

CS1N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CS1N60	VDMOS »ª¾§·ÖÁ¢Æ÷¼þ CS1N60(F) CS1N60(F)ÐÍ 1.¸ÅÊöÓëÌØµã CS1N60(F)ÊÇ ¹ØµçÂ· ¾ßÓÐÈçÏÂÌØµã ¿ª¹ØËÙ¶Èì Í¨Ì¬µç×èÐ¡ ¿É²¢ÁªÊ¹ÓÃ Çý¶¯¼òµ¥ ·â×°ÐÎÊ½ ²úÆ·Ãû³ CS1N60 CS1N60F ·â×°	EDN
CS1N65A3	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS1N65 A3 ○R General Description： CS1N65 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 0.8 20 13.8 pe	Huajing Microelectronics
CS1N60A1H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS1N60 A1H ○R General Description： CS1N60 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 0.8 3 11 per	Huajing Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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