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Datasheet CPC5603 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | CPC5603 | N-Channel Depletion Mode FET CPC5603
N-Channel Depletion Mode FET
Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power
Rating 415 14 2.5
Units V
W
Features
• 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 2 |
 Clare |
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| 2 | CPC5603 | N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION
Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power
Rating 415 14 2.5
Units V
W
Features
• 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C � |
 IXYS |
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| 1 | CPC5603C | N-Channel Depletion Mode FET CPC5603C
N Channel Depletion Mode FET
Features • Low on resistance 8 ohms • Breakdown voltage 415V minimum • High input impedance • Low input and output leakage • Small package size SOT-223 • PC Card (PCMCIA) Compatible • PCB Space and Cost Savings
Description The |
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