Datasheet CP361R Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CP361R	Small Signal MOSFET N-Channel Enhancement-Mode MOSFET Chip PROCESS Small Signal MOSFET CP361R N-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 14.2 x 14.2 MILS 3.9 MILS 3.94 x 3.94 MILS 3.94 x 7.08 MILS Al-Si - 30,000Å Au - 12,000Å	Central Semiconductor

CP3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CP3508	HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes) CP1500, 2500, 3500 SERIES HIGH CURRENT SILICON BRIDGE RECTIFIERS VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES l Plastic Case With Heatsink For Heat Dissipation l Surge Overload Ratings to 400 Amperes l The plastic package has Underwriters Laboratory Flammability	Pan Jit International Inc.
CP321611T-101x	Multilayer Chip Beads Multilayer Chip Beads / CP TYPE（Large Current） .Features: 1.Closed magnetic circuit structure allows high density mounting while preventing crosstalk. 2.Extremely high reliability due to entirely monolithic construction. 3.Low DC resistance structure of electrode to prevent w	TaeJin
CP379X	N-Channel Enhancement-Mode Transistor Chip PROCESS Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip CP379X PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 31.5 x 31.5 MILS 5.5 MILS 3.9 x 3.9 MILS 19.3 x 21.3 MILS	centralsemi

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Número de pieza	Descripción	Fabricantes	PDF
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